Peter Wilshaw: List of publications

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Special issue: Surface and interface passivation in crystalline silicon solar cells

Atom Probe Tomography Study of Gettering in High-Performance Multicrystalline Silicon

Understanding and optimizing EBIC pn-junction characterization from modeling insights

Direct observation of hydrogen at defects in multicrystalline silicon

Identification of colloidal silica polishing induced contamination in silicon

Microstructural Evolution of Mechanically Deformed Polycrystalline Silicon for Kerfless Photovoltaics

Scalable Techniques for Producing Field-Effect Passivation in High-Efficiency Silicon Solar Cells

Hydrogen Related Defects in Float Zone Silicon Investigated Using a Shielded Hydrogen Plasma

Hydrogen induced contact resistance in PERC solar cells

Modelling of hydrogen transport in silicon solar cell structures under equilibrium conditions

Potassium ions in SiO2: Electrets for silicon surface passivation

Atom Probe Tomography of Fast-Diffusing Impurities and the Effect of Gettering in Multicrystalline Silicon

The Behavior and Transport of Hydrogen in Silicon Solar Cells Observed through Changes in Contact Resistance

An enhanced alneal process to produce SRV < 1 cm/s in 1 Ω cm n-type Si

Effective Antireflection and Surface Passivation of Silicon Using a SiO2/a-T iOx Film Stack

Method of Extracting Solar Cell Parameters from Derivatives of Dark I-V Curves

Specimen preparation methods for elemental characterisation of grain boundaries and isolated dislocations in multicrystalline silicon using atom probe tomography

Long term stability of c-Si surface passivation using corona charged SiO 2

Dielectric surface passivation for silicon solar cells: A review

Saw Damage Gettering for industrially relevant mc-Si feedstock

Shielded hydrogen passivation − A potential in-line passivation process

A novel source of atomic hydrogen for passivation of defects in silicon

On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

Passivation of all-angle black surfaces for silicon solar cells

Extremely low surface recombination in 1 Ω cm n-type monocrystalline silicon

Shielded hydrogen passivation - A novel method for introducing hydrogen into silicon

Lowest surface recombination in n-type oxidised crystalline silicon by means of extrinsic field effect passivation

Monolithic Si nanocrystal/crystalline Si tandem cells involving Si nanocrystals in SiC

Corona Charge in SiO2: Kinetics and Surface Passivation for High Efficiency Silicon Solar Cells

Corona Field Effect Surface Passivation of n-type IBC Cells

SURFACE PASSIVATION PROVIDED BY AN ALNEAL THROUGH SIO2/TIO2 BILAYER

Investigation of Parasitic Edge Recombination in High-Lifetime Oxidized n-Si

Minority Carrier Lifetime Improvement of Multicrystalline Silicon Using Combined Saw Damage Gettering and Emitter Formation

Stable, Extrinsic, Field Effect Passivation for Back Contact Silicon Solar Cells

Self-assembled silicon nanocrystal arrays for photovoltaics

Charge transport in nanocrystalline SiC with and without embedded Si nanocrystals

Phosphorus diffusion in nanocrystalline 3C-SiC

Absorption and emission of silicon nanocrystals embedded in SiC: Eliminating Fabry-Pérot interference

Electrical characteristics of flash sintering: Thermal runaway of Joule heating

Erratum: On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation (Journal of Applied Physics (2014) 115 (144105))

Extrinsic Passivation of Silicon Surfaces for Solar Cells

Saw Damage Gettering for Improved Multicrystalline Silicon

Self-assembled silicon nanocrystal arrays for photovoltaics

Controlled field effect surface passivation of crystalline n-type silicon and its application to back-contact silicon solar cells

Electrical characteristics of flash sintering: Thermal runaway of Joule heating

Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation

Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion

Erratum: Publisher's Note: "boron diffusion in nanocrystalline 3C-SiC" (Applied Physics Letters (2014) 104 (213108))

A technique for field effect surface passivation for silicon solar cells

Boron diffusion in nanocrystalline 3C-SiC

On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation

Automated defect analysis in solar cells using EBIC

Electric field effect surface passivation for silicon solar cells

Electrical and optical characterisation of silicon nanocrystals embedded in SiC

Preliminary investigation of flash sintering of SiC

Stable field effect surface passivation of n-type Cz silicon

Thermal oxidation and encapsulation of silicon-carbon nanolayers

Chemical etching to dissolve dislocation cores in multicrystalline silicon

Deep level impurity engineered semi-insulating Cz-silicon as microwave substrates

Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substrates

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon

Chemical etching to dissolve dislocation cores in multicrystalline silicon

Determination of grain orientations in multicrystalline silicon by reflectometry

The development of semi-insulating silicon substrates for microwave devices

Measurements of dislocation locking by near-surface ion-implanted nitrogen in czochralski silicon

Nitrogen diffusion and interaction with dislocations in single-crystal silicon

A novel nano-porous alumina biomaterial with potential for loading with bioactive materials.

Secondary electron emission contrast of quantum wells in GaAs p-i-n junctions.

Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in silicon

Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations

Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations

An investigation into fracture of multi-crystalline silicon

Semi-Insulating Silicon for Microwave Devices

Cathodoluminescence Assessment of Low Temperature Gettering in Silicon and a Novel Technique for Estimating Bulk Minority Carrier Lifetime in Silicon

Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon

The Development of Semi-insulating Silicon Substrates for Microwave Devices

Counting Electrons in Transmission Electron Microscopes

Thin silicon strip devices for direct electron detection in transmission electron microscopy

Piezospectroscopic measurement of the stress field around an indentation crack tip in ruby using SEM cathodoluminescence

The role of dislocations in producing efficient near-bandgap luminescence from silicon

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking

Enhanced oxygen diffusion in highly doped p -type Czochralski silicon

Nitrogen in silicon: Transport and mechanical properties

Nitrogen in silicon: Transport and mechanical properties

Nitrogen-doped silicon: Mechanical, transport and electrical properties

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

Enhancement of resistivity of Czochralski silicon by deep level manganese doping

Substrate for High Frequency Integrated Circuit

Semi-insulating Czochralski-silicon for radio frequency applications

Transmission ion channeling analysis of isolated 60 degrees misfit dislocations

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments

High resolution deep level transient spectroscopy applied to extended defects in silicon

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments

Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)

The electric field and dopant distribution in p-i-n structures observed by ionisation potential (dopant contrast) microscopy in the HRSEM

The influence of nitrogen on dislocation locking in float-zone silicon

The influence of nitrogen on dislocation locking in float-zone silicon

The influence of nitrogen on dislocation locking in float-zone silicon

Impurity locking of dislocations in silicon

High-resolution scanning electron microscopy of dopants in p-i-n junctions with quantum wells

Formation of highly adherent nano-porous alumina on Ti-based substrates: a novel bone implant coating.

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon

Schottky diode back contacts for high frequency capacitance studies on semiconductors

A room temperature cathodoluminescence study of dislocations in silicon

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation locking by nitrogen impurities in FZ-silicon

Near-band gap luminescence at room temperature from dislocations in silicon

Nano-porous alumina coatings for improved bone implant interfaces

The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers

Initial in vitro interaction of osteoblasts with nano-porous alumina

'Semi-insulating' silicon using deep level impurity doping: Problems and potential

Getting connected - Improved bone implant interfaces

Fabrication of nanocrystalline aluminium islands using double-surface anodization

Generation of dislocation glide loops in Czochralski silicon

On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures

Onset of slip in silicon containing oxide precipitates

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion

On the locking of dislocations by oxygen in silicon

Large area gridded field emitter arrays using anodised aluminium

A study of oxygen dislocation interactions in CZ-Si

Residual gas effects on the emission characteristics of silicon field emitter arrays

Synthesis of high density arrays of nanoscaled gridded field emitters based on anodic alumina

Mechanism for secondary electron dopant contrast in the SEM

Nonlithographic technique for the production of large area high density gridded field emission sources

Locking of dislocations by oxygen in Cz-silicon

The segregation behaviour of oxygen at dislocations in silicon

Non lithographic technique for the production of large area high density gridded field emission sources

A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis

Microfabrication and characterization of gridded polycrystalline silicon field emitter devices

Displays - the future is flat

A study of the activation of CdTe/CdS thin film solar cells using OBIC

Anodisation of gridded silicon field emitter arrays

Application of secondary electron dopant contrast imaging to InP/InGaAsP laser structures

Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation

Microfabrication and characterisation of gridded polycrystalline silicon field emitter devices

Defect imaging and channeling studies using channeling scanning transmission ion microscopy

Imaging of the strain field around precipitate particles using transmission ion channeling

A study of the effects of post-deposition treatments on CdS/CdTe thin film solar cells using high resolution optical beam induced current

Characterization of porous silicon field emitter properties

Polycrystalline silicon field emitters

Modelling of the field emission microtriode with emitter covered with porous silicon

Enhanced field emission from polysilicon emitters using porous silicon

Fabrication of gated polycrystalline silicon field emitters

Characterisation of porous silicon field emitter properties

Electron beam induced current investigations of transition metal impurities at extended defects in silicon

Polycrystalline silicon field emitters

IMAGING OF DEEP DEFECTS USING TRANSMISSION ION CHANNELING

Application of transmission ion channeling to the imaging of stacking faults

BACKSCATTERED ELECTRON CONTRAST ON CROSS-SECTIONS OF INTERFACES AND MULTILAYERS IN THE SCANNING ELECTRON-MICROSCOPE

Transmission ion channeling images of crystal defects

Studies of porous silicon field emitters

Stacking-fault imaging using transmission ion channeling.

Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon.

SEM imaging of contrast arising from different doping concentrations in semiconductors

DECONVOLUTION METHOD TO OBTAIN COMPOSITION PROFILES FROM SEM BACKSCATTERED ELECTRON SIGNAL PROFILES FOR BULK SPECIMENS

AN ELECTRON-BEAM-INDUCED CURRENT STUDY OF DISLOCATIONS IN GAAS

ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON

An electron-beam-induced current study of dislocations in GaAs

CRYSTAL DEFECT IMAGING USING TRANSMISSION ION CHANNELING

Electron-beam-induced activity of defects in silicon

FIELD-EMISSION FROM PYRAMIDAL CATHODES COVERED IN POROUS SILICON

STUDIES OF POROUS SILICON FIELD EMITTERS

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON

Dislocation imaging using ion beam induced charge

DISLOCATION IMAGING WITH A SCANNING PROTON MICROPROBE USING CHANNELING SCANNING-TRANSMISSION ION MICROSCOPY (CSTIM)

EMISSION CHARACTERISTICS AND MORPHOLOGY OF WET ETCHED CATHODES IN P-TYPE SILICON

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE

Field emission from pyramidal emitters covered in porous silicon

IMAGING OF SEMICONDUCTOR DEFECTS USING ION CHANNELING

FLUX-CREEP IN HIGH-TEMPERATURE SUPERCONDUCTORS IN LOW FIELDS AT 77K

FLUX-CREEP IN HIGH-TEMPERATURE SUPERCONDUCTORS IN LOW FIELDS AT 77K

GETTERING OF COPPER AND IRON TO EXTENDED SURFACE-DEFECTS IN SILICON

THE LOW FIELD SIMULATION AND STUDY OF MAGNETIZATION IN HIGH-TC SUPERCONDUCTORS AT 77K

THE LOW FIELD SIMULATION AND STUDY OF MAGNETIZATION IN HIGH-TC SUPERCONDUCTORS AT 77K

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS

THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS

BACKSCATTERED ELECTRON COMPOSITIONAL ANALYSIS OF INTERFACES IN BULK SPECIMENS USING A DECONVOLUTION TECHNIQUE

BACKSCATTERED ELECTRON COMPOSITIONAL ANALYSIS OF INTERFACES IN BULK SPECIMENS USING A DECONVOLUTION TECHNIQUE

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS

PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON

GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON

THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE

THE CHEMISTRY AND PROPERTIES OF GRAIN-BOUNDARIES IN CHEMICALLY THINNED Y1BA2CU3O7-X

CALCULATIONS FOR DEFECT STRENGTH DETERMINATIONS

CAPACITANCE TRANSIENT SPECTROSCOPY OF DISLOCATIONS IN SEMICONDUCTORS

COMBINED APPLICATION OF SEM-CL AND SEM-EBIC FOR THE INVESTIGATION OF COMPOUND SEMICONDUCTORS

DEEP STATES ASSOCIATED WITH PLATINUM DECORATED STACKING-FAULTS IN SILICON

DISLOCATION DYNAMICS AND THE BRITTLE DUCTILE TRANSITION IN PRECRACKED SILICON

DISLOCATION EMISSION FROM CRACK TIPS AND THE MACROSCOPIC BRITTLE-TO-DUCTILE TRANSITION

DISLOCATION MECHANISMS FOR TWINNING AND POLYTYPIC TRANSFORMATIONS IN SEMICONDUCTORS

DISLOCATION-RELATED DEEP LEVELS IN GAAS - AN OPTICAL-ABSORPTION STUDY

DISLOCATIONS IN INDENTED GAALAS

EFFECT OF HE IN DISLOCATION PIPES ON PHOTOCONDUCTIVITY IN GE AND SI

EFFECT OF SURFACE-CHARGE ON THE DISLOCATION MOBILITY IN SEMICONDUCTORS

EFFECTS OF EXTENDED LATTICE-DEFECTS ON SILICON SEMICONDUCTOR-DEVICES

ELECTRICAL AND OPTICAL PHENOMENA OF II-VI SEMICONDUCTORS ASSOCIATED WITH DISLOCATIONS

ELECTRICAL AND OPTICAL-PROPERTIES OF DISLOCATIONS IN GAAS

ELECTRICAL-ACTIVITY ASSOCIATED WITH DISLOCATIONS IN SILICON

ELECTRON-MICROSCOPY OF PROCESS-INDUCED CRYSTAL DEFECTS

ELECTRONIC-PROPERTIES OF DISLOCATION SEGMENTS IN PLASTICALLY DEFORMED SILICON

ELECTRONIC-PROPERTIES OF DISLOCATIONS AND ASSOCIATED POINT-DEFECTS IN GAAS

EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS - A MICROSCOPIC MECHANISM

EXPERIMENTAL INVESTIGATION OF KINK MOTION IN A FIELD OF RANDOM FORCES

FRACTURE AND CRACK TIP PLASTICITY IN SILICON AND GALLIUM-ARSENIDE

GETTERING IN SILICON

HIGH SPATIAL-RESOLUTION CATHODOLUMINESCENCE FROM DISLOCATIONS IN SEMICONDUCTORS STUDIES IN A TEM

HIGH-RESOLUTION MICROCHEMISTRY AND STRUCTURE OF GRAIN-BOUNDARIES IN BULK Y1BA2CU3O7-X

HIGH-TEMPERATURE PLASTICITY OF III-V SEMICONDUCTORS

IMPURITY EFFECTS ON DYNAMIC BEHAVIOR OF DISLOCATIONS IN SEMICONDUCTORS

INCIPIENT DISLOCATION DIPOLES IN SILICON

INFLUENCE OF NONSTOICHIOMETRIC MELTS ON THE DEFECT STRUCTURE OF NORMAL-TYPE BULK GAAS CRYSTALS

INTERACTION OF IMPURITIES WITH DISLOCATION CORES IN SILICON

INTERFACE STATES AT SILICON GRAIN-BOUNDARIES

KINK FORMATION AND MIGRATION IN COVALENT CRYSTALS

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

LCAO ANALYSIS OF DISLOCATION-RELATED EPR-SPECTRA IN DEFORMED SILICON

LINESHAPE OF COMBINED RESONANCE ON DISLOCATIONS IN SEMICONDUCTORS

MECHANICAL-PROPERTIES AND DISLOCATION DYNAMICS OF COMPOUND AND ALLOY SEMICONDUCTORS

MICROWAVE CONDUCTIVITY IN PLASTICALLY DEFORMED SILICON

MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE

MODELS OF THE ATOMIC AND ELECTRONIC-STRUCTURES OF GRAIN-BOUNDARIES IN SILICON

OBSERVATIONS OF DISLOCATION DISTRIBUTIONS AND ASSOCIATED POINT-DEFECTS IN BULK-GROWN GAAS

ON THE FORMATION OF BRIGHT EBIC CONTRASTS AT CRYSTAL DEFECTS

ON THE HOMOGENEOUS NUCLEATION OF DISLOCATIONS DURING INTEGRATED-CIRCUIT PROCESSING

ON THE NATURE OF THE ASYMMETRY EFFECT IN DISLOCATION MOBILITY IN SI SINGLE-CRYSTALS

ON THE SHUFFLE GLIDE CONTROVERSY

OPTICAL STUDIES OF CADMIUM-SULFIDE CRYSTALS PLASTICALLY DEFORMED AT LOW-TEMPERATURES

OPTICAL-PROPERTIES OF DISLOCATIONS IN GERMANIUM-CRYSTALS

PLASTIC-DEFORMATION OF SI AND GE BICRYSTALS

PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON

RECONSTRUCTED DISLOCATIONS AND BROKEN BOND DEFECTS

STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 - PREFACE

STRUCTURE OF DEFORMATION-INDUCED BULK AND GRAIN-BOUNDARY DISLOCATIONS IN A SILICON-SIGMA=9(122) BICRYSTAL - A HREM STUDY

SYMMETRY AND CRYSTALLOGRAPHY - IMPLICATIONS FOR STRUCTURE

TEM INVESTIGATION OF DISLOCATIONS AROUND INDENTATIONS ON (0001) SIC

THE EFFECT OF GEOMETRICAL AND MATERIAL PARAMETERS ON THE STRESS RELIEF OF MISMATCHED HETEROEPITAXIAL SYSTEMS

THE EFFECT OF OXYGEN AND HYDROGEN ON THE BRITTLE DUCTILE TRANSITION OF SILICON

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON

THE PLASTICITY OF GAAS AT MEDIUM AND LOW-TEMPERATURES

THEORETICAL INVESTIGATIONS OF COMBINED CL AND EBIC MEASUREMENTS ON CRYSTAL DEFECTS

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS.

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC