No abstract available
Keywords:
GAAS
,PARAMETERS
,SCANNING ELECTRON-MICROSCOPE
,BEAM-INDUCED CURRENT
,BAND-GAP SEMICONDUCTORS
,CATHODOLUMINESCENCE MEASUREMENTS
,RECOMBINATION RADIATION
GAAS
,PARAMETERS
,SCANNING ELECTRON-MICROSCOPE
,BEAM-INDUCED CURRENT
,BAND-GAP SEMICONDUCTORS
,CATHODOLUMINESCENCE MEASUREMENTS
,RECOMBINATION RADIATION