Harish Bhaskaran

Selected Publications

J Feldmann, N Youngblood, CD Wright, H Bhaskaran and WHP Pernice, "All-optical spiking neurosynaptic networks with self-learning capabilities," Nature 569, 208-214 (2019). 

  • Featured in Nature News and Views: “A Role for optics in AI Hardware"

C Ríos, N Youngblood, Z Cheng, ML Gallo, WHP Pernice, CD Wright, A Sebastian and H. Bhaskaran, “In Memory Computing on a Photonics Platform,” Science Advances, doi: 10.1126/sciadv.aau5759 (2019).

Z. Cheng, C. Rios, N. Younglood, CD. Wright, WHP. Pernice and H. Bhaskaran, “Device‐Level Photonic Memories and Logic Applications Using Phase‐Change Materials,” Advanced Materials, DOI: 10.1002/adma.201802435 (2018).

J. Feldmann, M. Stegmaier, N. Gruhler, C. Rios, H. Bhaskaran, CD. Wright and WHP. Pernice, “Calculating with light using a chip-scale all-optical abacus,” Nature Communications, 1256, doi: 10.1038/s41467-017-01506-3 (2017).

Z. Cheng, C. Rios, WHP Pernice, CD Wright and H Bhaskaran, “On-chip photonic synapse,” Science Advances Vol. 3, no. 9, e1700160 (2017).

M. Wuttig, H. Bhaskaran and T. Taubner, “Phase Change Materials for non-volatile photonic applications,” Nature Photonics, 11, 465–476 (2017).

BF. Porter, N. Mkhize and H. Bhaskaran, “Nanoparticle assembly enabled by printed monolayers,” Microsystems and Nanoengineering, 3, 17054, doi: :10.1038/micronano.2017.54 (2017).

GS Sarwat, P Gehring, G Rodriguez-Hernandez, GAD Briggs, JA Mol and H Bhaskaran, “Scaling limits of graphene nanoelectrodes,” Nano Letters, doi:10.1021/acs.nanolett.7b00909 (2017).

M. Kumar and H. Bhaskaran, “Ultrasensitive Room-Temperature Transduction in Graphene-based Nanoelectromechanical Systems,” Nano Letters10.1021/acs.nanolett.5b00129 (2015). 

C. Rios, M. Stegmeier, P. Hosseini, D. Wang, T. Scherer, CD Wright, H. Bhaskaran and WHP Pernice, “Integrated all-photonic non-volatile multi-level memory”, Nature Photonics, doi:10.1038/nphoton.2015.182 (2015).

P. Hosseini, CD. Wright and H. Bhaskaran, “An optoelectronic framework enabled by low-dimensional phase change materials,” Nature 511, 206-211 (2014).

H. Bhaskaran, B. Gotsmann, A. Sebastian, U. Drechsler, MA.Lantz, M. Despont, P. Jaroenapibal, RW. Carpick, Y. Liu and K. Sridharan, “Ultralow nanoscale wear through atom-by-atom attrition in silicon-containing diamond-like carbon,” Nature Nanotechnology, 5, 181 - 185 (2010). 

Recent Publications

  • Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands

  • Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands

  • Roadmap on emerging hardware and technology for machine learning.

  • Experimental investigation of silicon and silicon nitride platforms for phase-change photonic in-memory computing

  • Integrated 256 Cell Photonic Phase-Change Memory with 512-Bit Capacity

  • Controlling Defects in Continuous 2D GaS Films for High-Performance Wavelength-Tunable UV-Discriminating Photodetectors.

  • Filamentary High-Resolution Electrical Probes for Nanoengineering.

  • Direct Laser Patterning and Phase Transformation of 2D PdSe2 Films for On-Demand Device Fabrication.

  • Ultrathin All-2D Lateral Graphene/GaS/Graphene UV Photodetectors by Direct CVD Growth.

  • Plasmonic nanogap enhanced phase-change devices with dual electrical-optical functionality.

  • More