Silicon dioxide (SiO2) continues to play an important role in the development of current photovoltaic devices, like passivating contact cells.
This study investigtes the recombination at this interface by varying temperature, injection-level and dielectric charge. An improved lifetime is observed with increasing temperature, indicating possible benefits under high temperature, therefore providing advantages when operating in the field.
Using the extended Shockley-Read-Hall recominbation model, we determine this interface defects' parameters, and most importantly the temperature-dependency of its capture cross-sections.
Read the full paper in Solar Energy Materials and Solar Cells.