Improving halide perovskite photovoltaic performance by understanding how structure and local composition control properties

Within the last decade, halide perovskites have become one of the most ubiquitous materials in optoelectronics research. Due to their impressive optoelectronic properties-long diffusion lengths, high carrier mobilities and broad, tunable absorption, these materials are currently the front runners in emerging thin-film photovoltaics. While the efficiencies of perovskite photovoltaics and light emitting diodes have soared, there are still fundamental questions about the structure-property relationships which exist in these materials that remain unanswered. This overarching goal of this project is to use high-resolution electron microscopy to conduct a detailed investigation into the nanoscale structure/composition of halide perovskite materials and relate this to their (i) optoelectronic properties and (ii) device performance. This includes but is not necessarily limited to the investigation of typical 3D perovskite structures, so-called hollow perovskites, and the interfaces of halide perovskites and charge transport layers.


The project will involve advanced electron-beam imaging and spectroscopy techniques carefully designed to overcome challenges such as the extreme sensitivity of the materials to electron irradiation. The project will involve detailed experiments using advanced instrumentation, and the development of data processing methods.

The interface between PbI2 and FAPbI3 halide perovskite determined using atomic resolution electron microscopy.


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