Electrostatic tuning of ionic charge in SiO2 dielectric thin films

Schematic of reactions to anneal time by interface charge by temperature

Here we show the successful incorporation of K+, Rb+ and Cs+ ions into SiO2 thin films using an electric field and temperature-assisted embedding process.

A comprehensive model of ion migration has been developed to show the dependence of ion kinetics on temperature and surface fields.  

Integrating ionic charge into dielectrics can be exploited to produce controlled electric fields and enable new device architectures.


The full paper is available to read in ECS Journal of Solid State Science and Technology.