In brief the group researches the properties and processing of semiconductors particularly silicon and particularly with reference to the production of improved solar cells. The research comprises four main areas.
The use of permanent charges introduced into dielectrics for surface passivation and application to novel cell geometries, passivated contacts etc.
The development of shielded hydrogen passivation for improved surface and bulk passivation.
Understanding and improving gettering processes which includes saw damage gettering, developing novel high temperature gettering processes and atom by atom analysis of electrically active defects (as characterised by electron beam induced current, EBIC) using atom probe tomography.
The development of a new vapour phase texturing technique for all silicon types including diamond wire sawn HP-multi.