Studies of rapid phase-change and resistive memory materials for information storage

Phase change memory materials based on chalcogenide alloys and resistive memory materials based on metal oxides are an important class of industrial materials, which find applications in electronic storage and rewritable memory. The operation of phase-change memory is based on fast and reversible phase transformation between amorphous and crystalline forms which have different properties. Similarly, resistive memory operates by transition between states that have different resistivities. Despite their wide commercial applications the exact mechanism describing fast phase transitions or resistance changes remains unclear. To understand the ways in which performance of memory devises using such materials can be improved, accurate structure properties correlations are required. The project will involve preparation of new phase change and resistive memory materials and investigation of their atomic structures using advanced diffraction and imaging techniques as well as theoretical simulations. The electric and optical properties of the materials will be also measured and correlated with their structures

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