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• Defect engineering to improve the cost-effectiveness of silicon-based photovoltaics
• Diffusion of light elements (e.g. nitrogen and oxygen) in silicon
• The electrical properties of oxide precipitates in silicon
• The behaviour of iron in silicon, including its solubility, interaction with extended defects and gettering
• The mechanical properties of multi-crystalline silicon, including fracture and residual stress
• Silicon carbide and silicon nitride precipitates in multi-crystalline silicon
• Lifetime spectroscopy by quasi-steady-state photoconductance (QSS-PC)

32. On the mechanism of recombination at oxide precipitates in silicon
J.D. Murphy, K. Bothe, V.V. Voronkov, R.J. Falster
Applied Physics Letters, 102 042105 (2013)

31. Fabrication of 'finger-geometry' silicon solar cells by electrochemical anodisation
G.F. Martins, A.J.R. Thompson, B. Goller, D. Kovalev, J.D. Murphy
Journal of Materials Science, 48 2977 (2013)

30. The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750ºC
J.D. Murphy, R.J. Falster
Journal of Applied Physics, 112 113506 (2012)

29. The impact of oxide precipitates on minority carrier lifetime in Czochralski silicon
J.D. Murphy, K. Bothe, R. Krain, V.V. Voronkov, R.J. Falster
Invited paper in ECS Transactions, 50 (5) 137 (2012)

28. Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
K. Bothe, R.J. Falster, J.D. Murphy
Applied Physics Letters, 101 032107 (2012)

27. Chemical etching to dissolve dislocation cores in multicrystalline silicon
N.J. Gregori, J.D. Murphy, J.M. Sykes, P.R. Wilshaw
Physica B, 407 2970 (2012)

26. Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: an application to oxide precipitates in silicon
J.D. Murphy, K. Bothe, R. Krain, V.V. Voronkov, R.J. Falster
Selected as a "Research Highlight" in Journal of Applied Physics, 111 113709 (2012)

25. Spin-dependent recombination in Czochralski silicon containing oxide precipitates
V. Lang, J.D. Murphy, R.J. Falster, J.J.L. Morton
Journal of Applied Physics, 111 013710 (2012)

24. The effect of oxide precipitates on minority carrier lifetime in p-type silicon
J.D. Murphy, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster
Journal of Applied Physics, 110 053713 (2011)

23. Contamination of silicon by iron at temperatures below 800°C
J.D. Murphy, R.J. Falster
Physica Status Solidi Rapid Research Letters, 5 370 (2011)

22. Recombination at oxide precipitates in silicon
J.D. Murphy, K. Bothe, R. Krain, M. Olmo, V.V. Voronkov, R.J. Falster
Solid State Phenomena, 178-179 205 (2011)

21. The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
Z. Zeng, J.D. Murphy, R.J. Falster, X. Ma, D. Yang, P.R. Wilshaw
Journal of Applied Physics, 109 063532 (2011)

20. Minority carrier lifetime in Czochralski silicon containing oxide precipitates
J.D. Murphy, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster
ECS Transactions, 33 (11) 121 (2010)

19. Determination of grain orientations in multi-crystalline silicon by reflectometry
Y. Wang, J.D. Murphy, P.R. Wilshaw
Journal of the Electrochemical Society, 157 H884 (2010)

18. An investigation into fracture of multi-crystalline silicon
B.R. Mansfield, D.E.J. Armstrong, P.R. Wilshaw, J.D. Murphy
Solid State Phenomena, 156-158 55 (2010)

17. Characterisation of plastic zones around crack-tips in pure single-crystal tungsten using electron backscatter diffraction
J.D. Murphy, A.J. Wilkinson, S.G. Roberts
IOP Conference Series: Materials Science and Engineering, 3 012015 (2009)

16. Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
C.R. Alpass, A. Jain, J.D. Murphy, P.R. Wilshaw
Journal of the Electrochemical Society, 156 H669 (2009)

15. Nitrogen in silicon: diffusion at 500 to 700°C and interaction with dislocations
C.R. Alpass, J.D. Murphy, R.J. Falster, P.R. Wilshaw
Materials Science and Engineering B, 159-160 95 (2009)

14. The mechanical properties of tungsten grown by chemical vapour deposition
J.D. Murphy, A. Giannattasio, Z. Yao, C.J.D. Hetherington, P.D. Nellist, S.G. Roberts
Journal of Nuclear Materials, 386-388 583 (2009)

13. Nitrogen diffusion and interaction with dislocations in single-crystal silicon
C.R. Alpass, J.D. Murphy, R.J. Falster, P.R. Wilshaw
Journal of Applied Physics, 105 013519 (2009)

12. Nanoindentation and micromechanical testing of iron-chromium alloys implanted with iron ions
F.M. Halliday, D.E.J. Armstrong, J.D. Murphy, S.G. Roberts
Advanced Materials Research, 59 304 (2009)

11. Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
C.R. Alpass, J.D. Murphy, A. Jain, P.R. Wilshaw
ECS Transactions, 16 (6) 249 (2008)

10. Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
C. R. Alpass, J.D. Murphy, A. Giannattasio, S. Senkader, R.J. Falster, P.R. Wilshaw
Physica Status Solidi (a), 204 2256 (2007)

9. Enhanced oxygen diffusion in highly-doped p-type Czochralski silicon
J.D. Murphy, P.R. Wilshaw, B.C. Pygall, S. Senkader, R.J. Falster
Journal of Applied Physics, 100 103531 (2006)

8. Nitrogen-doped silicon: mechanical, transport and electrical properties
J.D. Murphy, C.R. Alpass, A. Giannattasio, S. Senkader, D. Emiroglu, J.H. Evans-Freeman, R.J. Falster, P.R. Wilshaw
ECS Transactions, 3 (4) 239 (2006)

7. Nitrogen in silicon: transport and mechanical properties
J.D. Murphy, C.R. Alpass, A. Giannattasio, S. Senkader, R.J. Falster, P.R. Wilshaw
Nuclear Instruments and Methods in Physics Research B, 253 113 (2006)

6. Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
J.D. Murphy, S. Senkader, R.J. Falster, P.R. Wilshaw
Materials Science and Engineering B, 134 176 (2006)

5. The influence of nitrogen on dislocation locking in float-zone silicon
J.D. Murphy, A. Giannattasio, C.R. Alpass, S. Senkader, R.J. Falster, P.R. Wilshaw
Solid State Phenomena, 108-109 139 (2005)

4. High resolution deep-level transient spectroscopy applied to extended defects in silicon
J.H. Evans-Freeman, D. Emiroglu, K.D. Vernon-Parry, J.D. Murphy, P.R. Wilshaw
Journal of Physics: Condensed Matter, 17 S2219 (2005)

3. Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
A. Giannattasio, J.D. Murphy, S. Senkader, R.J. Falster, P.R. Wilshaw
Journal of the Electrochemical Society, 152 G460 (2005)

2. Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
J.D. Murphy, A. Giannattasio, S. Senkader, R.J. Falster, P.R. Wilshaw
Physica Status Solidi (a), 202 926 (2005)

1. Impurity locking of dislocations in silicon
A. Giannattasio, J.D. Murphy, S. Senkader, R.J. Falster, P.R. Wilshaw
Proceedings of the 206th Meeting of The Electrochemical Society, High Purity Silicon VIII, 2004-05 39 (2004)